Excitation of optical tamm state for photonic spin hall enhancement

This work presents a dielectric material-based optical Tamm state (OTS) excitation technique with modified dispersion characteristics for photonic spin hall effect (PSHE) enhancement. The dispersion analysis of the structure is carried out to validate OTS's localization and corresponding PSHE generation for a given polarization at 632.8 nm incident wavelength. The exceptional points are optimized by considering thickness-dependent angular dispersion analysis. PSHE-based transverse displacement (PSHE-TD) is dependent on the defect layer thickness. The optimized structure provides 10.73 [Formula: see text] (or 6.78 [Formula: see text]m) PSHE-TD at an incidence angle of 41.86[Formula: see text]. The PSHE-TD of the optimized structure is sufficiently high due to the much narrower resonance than the plasmonic-based structures. Further, the structure's potential to function as a PSHE-TD-based optical sensor is assessed. The optimized structure shows an analytical average sensitivity of about 43,789 [Formula: see text]m/RIU showing its capability to detect the analytes with refractive index variations in the [Formula: see text] range. The structure demonstrates a three-time sensitivity improvement compared to similar resonance designs. Considering only dielectric materials in the proposed structure and considerably enhanced PSHE-TD, the development of highly efficient PSHE-TD-assisted commercial structures is anticipated.