Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ultrafast transition from coherent to incoherent polariton nonlinearities in a hybrid 1L-WS<sub>2</sub>/plasmon structure.

Nature nanotechnology·2026
Same author

Achieving Wide-Temperature-Range Physical and Chemical Hydrogen Sorption in a Structural Optimized Mg/N-Doped Porous Carbon Nanocomposite.

Nano-micro letters·2026
Same author

A foundation model for atomistic materials chemistry.

The Journal of chemical physics·2025
Same author

An arbuscular mycorrhiza from the 407-million-year-old Windyfield Chert identified through advanced fluorescence and Raman imaging.

The New phytologist·2025
Same author

Electrically driven heterostructured far-infrared wire lasers with integrated graphene plasmons.

Nature nanotechnology·2025
Same author

Ultrafast Dynamics of Rydberg Excitons and Their Optically Induced Charged Complexes in Encapsulated WSe<sub>2</sub> Monolayers.

Nano letters·2025
Same journal

Daily briefing: 'Cyborg' cockroaches breathe underwater with printed suit.

Nature·2026
Same journal

China boosts prestigious grants for young scientists - will it ease competition?

Nature·2026
Same journal

Incoming US science academy chief vows to 'double down' on research.

Nature·2026
Same journal

Author Correction: Synthesis of enantioenriched atropisomers by biocatalytic deracemization.

Nature·2026
Same journal

Electrodeposited self-assembled molecules for perovskite photovoltaics.

Nature·2026
Same journal

Neutrino's nursery found: the 'Shadow Blaster'.

Nature·2026
See all related articles

Related Experiment Video

Updated: May 9, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K

Tailoring graphene for electronics beyond silicon

Francesca Iacopi, Andrea C Ferrari

    Nature
    |January 3, 2024
    PubMed
    Summary

    No abstract available in PubMed .

    Keywords:
    Condensed-matter physicsEngineeringMaterials science

    More Related Videos

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
    07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

    9.6K
    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
    07:51

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

    Published on: February 1, 2022

    3.3K

    Related Experiment Videos

    Last Updated: May 9, 2026

    Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
    11:42

    Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

    Published on: July 24, 2015

    15.5K
    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
    07:12

    A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

    Published on: August 28, 2018

    9.6K
    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
    07:51

    Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

    Published on: February 1, 2022

    3.3K