Ultrashort channel MoSe₂transistors with selenium atoms replaced at the interface: first-principles quantum-transport...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Achieving n- and p-type transition metal dichalcogenide (TMD) field-effect transistors for nanoscale complementary metal oxide semiconductor (CMOS) applications is hindered by high contact resistance.
• Developing efficient interfaces is crucial for advancing next-generation semiconductor devices.

Purpose of the Study:

• To investigate methods for reducing contact resistance in TMD-based transistors.
• To explore the creation of novel metamaterial interfaces for improved device performance.

Main Methods:

• Quantum transport calculations were employed to simulate interface modifications.
• Partial replacement of Selenium (Se) atoms in Molybdenum Diselenide (MoSe₂) with Arsenic (As) or Bromine (Br) atoms was performed at the interface.

Main Results:

• A new interface structure, MoSeX (Pt/MoSeX/MoSe₂; X = As, Br), was successfully created.
• These stable metamaterials exhibit semi-metallic properties, leading to a significant reduction in contact resistance.
• The findings demonstrate a viable pathway to lower contact resistance in MoSe₂.

Conclusions:

• The developed metamaterial interface offers a promising solution for overcoming contact resistance challenges in MoSe₂-based transistors.
• This research provides critical insights for the development of advanced nano-CMOS logic devices utilizing MoSe₂.