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Updated: Jul 6, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Paramagnetic Point Defect in Fluorine-Doped Silica Glass: The E^{'}(F) Center
Linards Skuja1, Madara Leimane1, Nadège Ollier2
1Institute of Solid State Physics, University of Latvia, Riga LV1063, Latvia.
Abstract:
Fluorine-doped silica is a key material used in all low-loss and/or radiation-resistant optical fibers. Surprisingly, no fluorine-related radiation-induced point defects have been identified. By using electron paramagnetic resonance, we report the first observation of F-related defects in silica. Their fingerprint is a doublet with 10.5 mT splitting due to hyperfine coupling (hfc) to ^{19}F nuclear spins. An additional 44.4 mT hfc to the ^{29}Si nucleus indicates that this defect belongs to the "E^{'} center" family and has a structure of a fluorine-modified Si dangling bond: 3-coordinated Si atoms with an unpaired electron in an sp^{3} orbital, bonded to a glass network by 2 bridging oxygen atoms and to a F atom.
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