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Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for
Byeong-Jun Park1, Han-Sol Kim1, Sung-Ho Hahm1
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|January 11, 2024
Summary
This study analyzes trap states in Gallium Nitride (GaN) Schottky barrier Metal-Oxide-Semiconductor Field-Effect Transistors (SB-MOSFETs) for ultraviolet (UV) photodetectors. Trap states significantly impact device performance, affecting current density and voltage shifts.
Area of Science:
- Semiconductor device physics
- Optoelectronics
- Materials science
Background:
- Ultraviolet (UV) photodetectors are crucial for various industrial, military, and scientific applications.
- Schottky barrier (SB)-MOSFETs show promise for optoelectronics due to low dark current and high barrier properties.
Purpose of the Study:
- To investigate the impact of trap states on the performance of n-channel GaN SB-MOSFETs.
- To understand the mechanisms behind UV detection in these devices.
Main Methods:
- Technology Computer-Aided Design (TCAD) simulations were employed to model the GaN SB-MOSFET.
- Analysis focused on the effects of different types of trap states (shallow/deep, donor/acceptor) at various interfaces.
Main Results:
- Shallow donor-like traps degrade subthreshold swing and off-state current.
- Shallow acceptor-like traps negatively affect threshold voltage, subthreshold swing, and on-state current.
- Photo-gating effect due to trapped holes in shallow states enhances UV response.
Conclusions:
- Trap states at the oxide/GaN and metal/GaN interfaces critically influence GaN SB-MOSFET output characteristics.
- Understanding trap behavior is essential for optimizing UV photodetector performance and monolithic integration.
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