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Updated: Jul 5, 2025

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Author Correction: Spontaneous broken-symmetry insulator and metals in tetralayer rhombohedral graphene
Kai Liu1, Jian Zheng1, Yating Sha1
1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
Nature Nanotechnology
|January 15, 2024
Abstract
No abstract available in PubMed .
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