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Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures
Simone Laterza1,2, Antonio Caretta2, Richa Bhardwaj2
1Department of Physics, University of Trieste, Via A. Valerio 2, 34127, Trieste, Italy.
Scientific Reports
|January 15, 2024
Summary
This study reveals a magnetic proximity effect at nickel-silicon interfaces, where semiconductor magnetization depends on doping levels. Low-doped silicon aligns parallel to nickel, while high-doped silicon aligns antiparallel, impacting spintronic device design.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Metal-semiconductor interfaces are crucial for electronic and spintronic devices.
- Understanding interfacial magnetic phenomena is key to developing novel functionalities.
Purpose of the Study:
- To investigate the magnetic proximity effect at nickel-silicon interfaces.
- To analyze how semiconductor doping influences interfacial magnetism.
Main Methods:
- Systematic X-ray magnetic circular dichroism (XMCD) studies at Ni and Si edges.
- Analysis of two Ni/Si heterostructures with varying semiconductor doping levels.
Main Results:
- Observed magnetic proximity effect inducing equilibrium magnetization in the silicon substrate.
- Low-doped Si samples exhibited parallel magnetization alignment to Ni.
- High-doped Si samples showed antiparallel magnetization alignment to Ni.
Conclusions:
- Doping concentration critically controls the sign of induced magnetization in silicon.
- Electron tunneling and exchange splitting modifications are key mechanisms.
- Findings advance the design principles for advanced spintronic devices.
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