A new design approach for dual-band power amplifiers based on dual-band HCC and bandpass filter

This paper introduces a novel design approach based on the dual-band harmonic control circuit and bandpass filter for dual-band power amplifiers. The circuit schematic of the proposed approach is constructed using four resonators and RFC inductors. The first two resonators are dedicated to controlling the second harmonics, while the third and fourth resonators serve as a harmonic blocker, allowing only the main signals to pass through to the load. Subsequently, all components are replaced by circuits based on microstrip elements, forming the proposed OMN. This OMN includes a novel wideband bias circuit, elliptically coupled resonators, and a new dual-band bandpass filter. To ensure compatibility with the transistor, a compensator line has been integrated. As a result, a dual-band power amplifier has been fabricated and measured at two operating frequencies, 2.1 GHz and 2.91 GHz. The measured values for drain efficiency, output power, and power gain at 2.1 GHz are 75.98%, 37.5 dBm, and 12.5 dB, respectively. Similarly, at 2.91 GHz, these values are 75.73%, 37.24 dBm, and 12.24 dB, respectively.