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Mask correction method for surface plasmon lithography.

Le Ma, Libin Zhang, Jianfang He

|January 16, 2024

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This study introduces a new model for surface plasmon lithography (SPL) mask correction, significantly reducing critical dimension (CD) errors in nano-fabrication. The improved model enhances pattern fidelity for manufacturing applications.

Area of Science:

Nanotechnology and Materials Science
Optical Engineering
Semiconductor Manufacturing

Background:

Surface plasmon lithography (SPL) is an advanced nano-fabrication technique.
Achieving high pattern fidelity in SPL requires precise mask correction to minimize critical dimension (CD) errors.
Existing aerial image models (FDTD, RCWA) are insufficient for manufacturing-level mask correction.

Purpose of the Study:

To develop a comprehensive model for SPL mask correction.
To improve the accuracy of critical dimension (CD) control in nano-fabrication using SPL.
To establish rule tables for mask correction based on simulated after-development images (ADI).

Main Methods:

A combined optical and resist model was developed for SPL simulation.

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The Finite Difference Time Domain (FDTD) method was employed for optical modeling.

Test patterns with a 130 nm target CD were simulated to generate ADI data.

Rule tables were derived from simulation data for 1D line and line-end patterns.

Main Results:

The comprehensive model accurately simulated after-development images (ADI) for SPL.
Rule tables for mask correction were successfully established for 1D line and line-end patterns.
Post-corrected patterns demonstrated significantly improved critical dimension (CD) error performance.

Conclusions:

The proposed comprehensive model enhances SPL pattern fidelity for manufacturing.
This approach offers a viable solution for reducing CD errors in nano-fabrication.
The developed rule tables provide a practical method for SPL mask correction.