Related Experiment Video
Updated: Jul 5, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Josephson dynamics and Shapiro steps at high transmissions: current bias regime
Artem V Galaktionov1, Andrei D Zaikin1,2
1I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute, 119991 Moscow, Russia.
We studied superconducting nanojunctions and found that sub-Ohmic dissipation causes a linear voltage-current relationship above the critical current. This intrinsic dissipation significantly affects Shapiro steps under microwave radiation.
Area of Science:
- Condensed Matter Physics
- Quantum Electronics
- Superconductivity
Background:
- Josephson dynamics in superconducting nanojunctions are crucial for quantum device applications.
- Understanding dissipation mechanisms is key to controlling superconducting circuit behavior.
Purpose of the Study:
- To investigate Josephson dynamics in highly transparent superconducting nanojunctions at low temperatures and subgap voltages.
- To characterize the impact of intrinsic sub-Ohmic dissipation on junction behavior and Shapiro steps.
Main Methods:
- Theoretical investigation of Josephson dynamics.
- Analysis of current-voltage (I-V) characteristics under microwave irradiation.
- Focus on subgap voltages and temperatures where intrinsic dissipation is sub-Ohmic.
Main Results:
- Identified intrinsic sub-Ohmic dissipation in highly transparent superconducting nanojunctions.
- Observed a linear dependence of average voltage on bias current slightly exceeding the critical current.
- Demonstrated significant influence of sub-Ohmic dissipation on integer Shapiro steps.
Conclusions:
- Intrinsic sub-Ohmic dissipation plays a critical role in the electrical characteristics of superconducting nanojunctions.
- This dissipation mechanism directly impacts the formation and behavior of Shapiro steps.
- Findings are relevant for the design and optimization of superconducting electronic devices.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
11:44Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
Related Concept Videos
Transmission-Line Differential Equations
Line Section Model
A circuit representing a line section of length Δx helps in understanding the transmission line parameters. The voltage V(x) and current i(x) are measured...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Torque On A Current Loop In A Magnetic Field
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...