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Updated: Jul 5, 2025
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides
Florian Hornung1, Ulrich Pfister1, Stephanie Bauer1
1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany.
Abstract:
Integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances, making the realization of these QDs into PICs highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e., single-mode waveguides (WGs) with integrated GaAs-QDs and beamsplitters. We study the statistical distribution of wavelength, linewidth, and decay time of the excitonic line, as well as the quantum optical properties of individual emitters under resonant excitation. We achieve single-photon purities as high as 1 - g(2)(0) = 0.929 ± 0.009 and two-photon interference visibilities of up to VTPI = 0.953 ± 0.032 for consecutively emitted photons.
