Study on the behavior of clusters in the physical recovery of GaAs scrap

Gallium arsenide (GaAs) is the most widely used second-generation semiconductor material. However, a large amount of GaAs scrap is generated at various stages of the GaAs wafer production process. Volatile GaAs clusters are inevitably generated during the process of GaAs vacuum thermal decomposition, resulting in lower purity of the recovered arsenic and the loss of gallium. In this study, thermodynamic analysis and dynamics simulation were combined to discuss the possibility of separating GaAs clusters and arsenic from a microscopic perspective. A vacuum thermal decomposition-directional condensation recovery process for GaAs scrap was proposed. By properly adjusting the separation parameters such as heating temperature, holding time and raw material size, high purity of gallium (99.99%) and arsenic (99.5%) were directly recovered under a system pressure of 1 Pa, heating temperature of 1323 K, holding time of 3 h, and GaAs scrap size of 2.5 cm. GaAs clusters were also recovered in powder form. The problem of difficult separation of GaAs clusters from arsenic was effectively solved by this method, and the purity of recovered arsenic was greatly improved. No additives are required and no waste liquid or gas emission in the whole process. The complexity of subsequent arsenic purification operations and the threat of arsenic containing waste to the environment were reduced as well.