Related Experiment Video
Updated: Jul 5, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Asymmetric edge supercurrents in MoTe2 Josephson junctions
Pingbo Chen1,2, Jinhua Wang2, Gongqi Wang2
1Department of Physics, Harbin Institute of Technology Harbin 150001 China.
Researchers studied supercurrent interference in niobium/molybdenum ditelluride/niobium (Nb/MoTe2/Nb) Josephson junctions. Results show edge states dominate supercurrent, indicating higher-order topological properties in MoTe2 for potential applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Higher-order topological insulators (HOTIs) exhibit unique boundary states.
- Molybdenum ditelluride (MoTe2) is a material with potential for hosting topological states.
Purpose of the Study:
- To investigate higher-order topological properties in MoTe2.
- To explore the role of edge states in supercurrent transport.
Main Methods:
- Fabrication and characterization of niobium/molybdenum ditelluride/niobium (Nb/MoTe2/Nb) planar Josephson junctions.
- Systematic study of supercurrent interference patterns.
- Comparative analysis of edge-touched and untouched junctions.
Main Results:
- Supercurrent transport in Nb/MoTe2/Nb junctions is dominated by the edges of MoTe2.
- An asymmetric Josephson effect with a field-tunable sign was observed.
- Evidence for nontrivial edge states, potentially hinge states, in MoTe2.
Conclusions:
- MoTe2 exhibits characteristics of a higher-order topological insulator.
- Edge states play a crucial role in the observed phenomena.
- MoTe2-based Josephson junctions show promise for current rectification applications.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Types Of Superconductors
Magnetic Force Between Two Parallel Currents
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and the vector product of the length vector along the current element and the field due to the first conductor. According to the...
P-N junction

