Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
Biasing of P-N Junction01:16

Biasing of P-N Junction

539
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
539
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Types Of Superconductors01:28

Types Of Superconductors

982
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
982
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

3.5K
Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
3.5K
P-N junction01:11

P-N junction

536
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
536

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Stability and Dynamics of Milling Process During Cutter-Workpiece Engagement and Disengagement Stages.

Micromachines·2026
Same author

Magnetoresistance Oscillations in Few-Layer NbSe_{2} in Superconducting Fluctuation Regime.

Physical review letters·2026
Same author

Cascaded, self-decomposing messenger in MXene@Cu-MOF heterostructures for on-demand infection control and pro-angiogenic wound repair.

Materials today. Bio·2026
Same author

Animal Model of Implant-Associated Infections in Mice.

Journal of visualized experiments : JoVE·2025
Same author

Ultrapure and efficient electroluminescence in alkali metal doped inorganic perovskite quantum wires arrays.

Nature communications·2025
Same author

Conditional probabilistic-based domain adaptation for cross-subject EEG-based emotion recognition.

Cognitive neurodynamics·2025

Related Experiment Video

Updated: Jul 5, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Asymmetric edge supercurrents in MoTe2 Josephson junctions.

Pingbo Chen1,2, Jinhua Wang2, Gongqi Wang2

  • 1Department of Physics, Harbin Institute of Technology Harbin 150001 China.

Nanoscale Advances
|January 18, 2024
PubMed
Summary

Researchers studied supercurrent interference in niobium/molybdenum ditelluride/niobium (Nb/MoTe2/Nb) Josephson junctions. Results show edge states dominate supercurrent, indicating higher-order topological properties in MoTe2 for potential applications.

More Related Videos

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.8K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K

Related Experiment Videos

Last Updated: Jul 5, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.8K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Higher-order topological insulators (HOTIs) exhibit unique boundary states.
  • Molybdenum ditelluride (MoTe2) is a material with potential for hosting topological states.

Purpose of the Study:

  • To investigate higher-order topological properties in MoTe2.
  • To explore the role of edge states in supercurrent transport.

Main Methods:

  • Fabrication and characterization of niobium/molybdenum ditelluride/niobium (Nb/MoTe2/Nb) planar Josephson junctions.
  • Systematic study of supercurrent interference patterns.
  • Comparative analysis of edge-touched and untouched junctions.

Main Results:

  • Supercurrent transport in Nb/MoTe2/Nb junctions is dominated by the edges of MoTe2.
  • An asymmetric Josephson effect with a field-tunable sign was observed.
  • Evidence for nontrivial edge states, potentially hinge states, in MoTe2.

Conclusions:

  • MoTe2 exhibits characteristics of a higher-order topological insulator.
  • Edge states play a crucial role in the observed phenomena.
  • MoTe2-based Josephson junctions show promise for current rectification applications.