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Self-interaction corrected SCAN functional for molecules and solids in the numeric atom-center orbital framework.

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This study introduces a stable self-interaction correction (SIC) method to improve density-functional approximations (DFAs) like SCAN. The new approach enhances accuracy for ionization potentials, charge-transfer energies, and bandgaps in molecules and solids.

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Area of Science:

  • Computational Chemistry
  • Materials Science
  • Quantum Mechanics

Background:

  • Semilocal density-functional approximations (DFAs) suffer from self-interaction error (SIE).
  • The Perdew-Zunger self-interaction correction (PZ-SIC) method aims to mitigate SIE but is numerically unstable.
  • Accurate electronic structure calculations are crucial for predicting material and molecular properties.

Purpose of the Study:

  • To develop a numerically stable and efficient implementation of the PZ-SIC method.
  • To mitigate the self-interaction error in the SCAN functional.
  • To improve the accuracy of calculated electronic properties for molecules and solids.

Main Methods:

  • Introduced a novel constraint for self-consistent localization of SIC orbitals, inspired by Edmiston-Ruedenberg localization.
  • Implemented the constrained PZ-SIC method within the all-electron numeric atom-centered orbitals code FHI-aims.
  • Tested the method on various molecules and solids to assess its performance for electronic properties.

Main Results:

  • Achieved efficient and stable convergence for self-consistent PZ-SIC calculations in both molecules and solids.
  • Demonstrated significant mitigation of SIE in the SCAN functional, improving accuracy for ionization potentials, charge-transfer energies, and bandgaps.
  • Showed that the method does not improve properties already accurately described by SCAN, such as cohesive energies and lattice constants.

Conclusions:

  • The developed constrained PZ-SIC method offers a stable and practical approach to correct self-interaction error in DFAs.
  • This advancement improves the predictive power of electronic structure calculations for specific properties.
  • Highlights the ongoing need for next-generation DFAs with broader applicability and inherent accuracy.