Underflow Gates
Biasing of FET
Design Example: Forces in Sluice Gate
MOSFET: Enhancement Mode
Norton Equivalent Circuits
Characteristics of MOSFET
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Bujiao Wu1,2, Xiaoyang Wang1,3, Xiao Yuan1,2
1Center on Frontiers of Computing Studies, Peking University, Beijing 100871, China.
We introduce leakage randomized benchmarking (LRB) to accurately measure quantum system leakage. This new method is robust against noise and benchmarks multi-qubit systems, overcoming limitations of prior techniques.
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