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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Energy Stored in Capacitors01:10

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A parallel plate capacitor, when connected to a battery, develops a potential difference across its plates. This potential difference is key to the operation of the capacitor, as it determines how much electrical energy the capacitor can store.
By integrating the equation that relates voltage and current in a capacitor, one can derive an equation for the voltage across the capacitor at any given time. This equation is crucial in understanding and predicting the behavior of capacitors in...
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Applications of RC Circuits01:22

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A relaxation oscillator is one of the applications of RC circuits. A neon lamp relaxation oscillator comprises a capacitor, a resistor, a voltage source, and a lamp. The lamp acts like an open circuit, with infinite resistance until the potential difference across the lamp reaches a specific voltage. At that voltage, the lamp acts like a short circuit with zero resistance, and the capacitor discharges through the lamp, thus producing light. Once the capacitor is fully discharged through the...
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RC Circuits: Discharging A Capacitor01:27

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One of the applications of an RC circuit is the relaxation oscillator. The relaxation oscillator comprises a voltage source, a capacitor, a resistor, and a neon lamp. The lamp acts like an open circuit (infinite resistance) until the potential difference across the neon lamp reaches a specific voltage. At that voltage, the lamp acts like a short circuit (zero resistance), and the capacitor discharges through the neon lamp and produces light. Once the capacitor is fully discharged through the...
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First-Order Circuits

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First-order electrical circuits, which comprise resistors and a single energy storage element - either a capacitor or an inductor, are fundamental to many electronic systems. These circuits are governed by a first-order differential equation that describes the relationship between input and output signals.
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When a DC source is abruptly disconnected from an RC (Resistor-Capacitor) circuit, the circuit becomes source-free. Assuming that the capacitor was fully charged before the source was removed, its initial voltage, denoted as V0, can be considered as the initial energy that stimulates the circuit.
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A Method for Growing Bio-memristors from Slime Mold
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Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing.

Sang Ho Lee1, Jin Park1, Young Jun Yoon2

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|January 22, 2024
PubMed
Summary

This study introduces a novel self-refreshing mechanism for junctionless field-effect transistors (JLFETs) used in dynamic random-access memory (1T-DRAM). This innovation enhances data retention and reliability in advanced memory devices.

Keywords:
junctionless field-effect transistorone-transistor dynamic random-access memoryself-refreshing operationsilicon-on-insulator

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Area of Science:

  • Solid-state physics
  • Semiconductor device physics
  • Materials science

Background:

  • Dynamic random-access memory (DRAM) is crucial for computing, but suffers from data retention issues.
  • Traditional DRAM requires constant power to refresh stored data, leading to energy consumption.
  • Junctionless field-effect transistors (JLFETs) offer potential for scaled memory devices.

Purpose of the Study:

  • To propose and investigate a novel self-refreshing mechanism in a silicon-on-insulator (SOI) based 1T-DRAM using JLFETs.
  • To demonstrate the effectiveness of impact ionization for continuous hole generation and prevention of recombination.
  • To evaluate the performance metrics including sensing margin, retention time, and reliability of the proposed device.

Main Methods:

  • Implementation of a self-refreshing mechanism utilizing impact ionization during the holding bias.
  • Fabrication of a junctionless field-effect transistor (JLFET) on a silicon-on-insulator (SOI) substrate.
  • Experimental characterization of sensing margins at different temperatures (300 K and 358 K).
  • Assessment of performance retention time and cell disturbance.

Main Results:

  • The proposed self-refreshing mechanism achieved sensing margins of 15.4 and 12.7 μA/μm at 300 K and 358 K, respectively.
  • Demonstrated excellent performance retention time exceeding 500 ms, independent of temperature for the single-gate 1T-DRAM.
  • Cell disturbance analysis and voltage optimization confirmed the in-cell reliability of the JLFET-based 1T-DRAM.
  • The device exhibited superior energy consumption and writing speed.

Conclusions:

  • The novel self-refreshing mechanism effectively enhances the reliability and performance of JLFET-based 1T-DRAM.
  • The impact ionization-based approach offers a promising solution for overcoming data retention limitations in DRAM.
  • This technology presents significant potential for energy-efficient and high-speed memory applications.