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Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Hyejin Kim1, Geonhui Han1, Seojin Cho1

  • 1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|January 22, 2024
PubMed

Keywords:
CMOS compatibilityMIM structureinner resistor effectlow-power operationmultilayer synaptic device

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