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Related Experiment Video

Updated: Jun 19, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Programmable Ferroelectricity in Hf_0.5Zr_0.5O₂ Enabled by Oxygen Defect Engineering.

Minghao Shao¹, Houfang Liu¹, Ri He²

¹Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.

|January 22, 2024

Summary

This study demonstrates electrically controllable ferroelectricity in hafnia-based heterostructures using a novel electrode. This allows for multilevel polarization states, advancing ferroelectric electronics and memory applications.

Keywords:

ferroelectric HZO in situ characterization multilevel polarization states oxygen defect

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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

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Published on: June 9, 2023

Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

Ferroelectricity in hafnia-based materials is crucial for Si-compatible electronics.
Distinguishing intrinsic ferroelectric polarization from polar phases and oxygen vacancies is a significant challenge.

Purpose of the Study:

To demonstrate electrically controllable ferroelectricity in a Hf_0.5Zr_0.5O₂ heterostructure.
To utilize a mixed ionic-electronic conductor electrode for manipulating ferroelectric properties.
To achieve multilevel polarization states for advanced electronic applications.

Main Methods:

Fabrication of a Hf_0.5Zr_0.5O₂ heterostructure with Sr-doped LaMnO₃ electrode.
In situ macroscopic characterization and atomic imaging of oxygen vacancy dynamics.
Electrical modulation of ferroelectric polarization states.

Main Results:

Achieved electrically reversible oxygen vacancy extraction and insertion in Hf_0.5Zr_0.5O₂.
Demonstrated multilevel polarization states controlled by electric fields.
Confirmed the role of the mixed conductor in enabling advanced ferroelectric functionality.

Conclusions:

The mixed ionic-electronic conductor electrode facilitates the control and utilization of ferroelectric properties.
Programmed ferroelectric heterostructures with Si-compatible doped hafnia are promising for future electronic devices.
This work offers a pathway for developing next-generation ferroelectric memory and logic applications.