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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Gradual degradation in InAs quantum dot lasers on Si and GaAs.

Eamonn T Hughes¹, Chen Shang¹, Jennifer Selvidge^1,2

¹Materials Department, University of California Santa Barbara, Santa Barbara, California, USA. jbowers@ucsb.edu.

|January 22, 2024

Summary

Quantum dot lasers on silicon degrade due to point defects, not just dislocations. Modifying fabrication and growth conditions can improve laser reliability for integrated silicon photonics.

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Area of Science:

Integrated photonics
Semiconductor lasers
Materials science

Background:

Quantum dot (QD) lasers on silicon are crucial for integrated silicon photonics.
Reliable QD lasers on silicon remain a significant challenge.
Understanding degradation mechanisms is key to improving device longevity.

Purpose of the Study:

To investigate the long-term degradation of QD lasers on silicon.
To compare degradation in QD lasers with and without misfit dislocation trapping layers.
To identify the primary causes of degradation in QD lasers on silicon.

Main Methods:

Aging QD lasers on silicon (with and without trapping layers) for 12,000 hours.
Aging QD lasers on native GaAs for 8,400 hours as a reference.
Utilizing electroluminescence imaging and electron microscopy to analyze aged lasers.

Main Results:

Non-trapping-layer QD lasers on silicon showed heavy degradation.
QD lasers with trapping layers and QD lasers on GaAs exhibited more modest degradation.
Nanoscale dislocation loops were observed in all aged QD lasers.
Point defect generation and migration were identified as the primary degradation source, leading to non-radiative recombination and dislocation loop formation.

Conclusions:

Point defects, not dislocations, are the main cause of QD laser degradation on silicon.
Shallow etch ridge fabrication and post-growth annealing are proposed to enhance laser reliability.
Minimizing point defect density during growth is essential for stable QD laser performance in silicon photonics.