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Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers.

Tai-Cheng Yu¹, Wei-Ta Huang^1,2, Hsiang-Chen Wang¹

¹Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.

|January 23, 2024

Summary

This summary is machine-generated.

This study introduces a novel red vertical-cavity surface-emitting laser (VCSEL) using nanoporous distributed Bragg reflectors and high-index contrast gratings. Simulations guide the design for high polarization and efficiency in these semiconductor lasers.

Keywords:

InGaN high-index contrast grating nanoporous DBR staggered MQW vertical-cavity surface-emitting laser

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Published on: June 25, 2020

Area of Science:

Optoelectronics
Materials Science
Semiconductor Physics

Background:

Vertical-cavity surface-emitting lasers (VCSELs) are crucial for optical communication and sensing.
Achieving high polarization and efficiency in red-emitting VCSELs remains a challenge.
Novel designs incorporating advanced materials and structures are needed to overcome current limitations.

Purpose of the Study:

To propose and simulate a highly polarized red VCSEL (612 nm).
To investigate the impact of nanoporous (NP) GaN distributed Bragg reflectors (DBRs) and TiO2 high-index contrast gratings (HCGs) on device performance.
To provide design guidelines for efficient and bright red VCSELs.

Main Methods:

Optoelectronic simulations were performed for a 612 nm VCSEL.
The influence of NP DBR and HCG geometries on optical reflectivity was systematically analyzed.
Cavity mode wavelength and optical threshold gain were investigated for finite-sized HCGs.

Main Results:

Over 17 pairs of NP GaN DBRs with 60% air voids achieved >99.7% reflectance.
Optimal HCG dimensions (period, width-to-period, height-to-period ratios) were identified.
A large threshold gain difference (67.4-74%) between transverse modes was obtained, indicating high polarization.

Conclusions:

The proposed VCSEL design with staggered InGaN multiple quantum wells, NP DBRs, and HCGs demonstrates potential for high polarization.
Simulation results offer a roadmap for developing efficient and bright red VCSELs.
The design considerations are critical for future optoelectronic device fabrication.