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The Understanding and Compact Modeling of Reliability in Modern Metal-Oxide-Semiconductor Field-Effect Transistors:

Zixuan Sun1, Sihao Chen2, Lining Zhang2

  • 1School of Integrated Circuits, Peking University, Beijing 100871, China.

Micromachines
|January 23, 2024
PubMed

Keywords:
MOSFETbias temperature instability (BTI)electromigration (EM)hot carrier degradation (HCD)mixed-mode reliabilityoff-state degradation (OSD)self-heatingtime-dependent dielectric breakdown (TDDB)

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