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Related Concept Videos

MOSFET01:16

MOSFET

472
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
378
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

336
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

356
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Related Experiment Video

Updated: Jul 4, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2.

Jungi Song1, Suyeon Lee1, Yongwook Seok1

  • 1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.

ACS Nano
|January 26, 2024
PubMed
Summary
This summary is machine-generated.

This study demonstrates drain-bias-induced carrier type switching in ambipolar molybdenum disulfide (MoS2) transistors. This enables multifunctional devices for advanced switching electronics with high performance and facile fabrication.

Keywords:
ambipolar transportbreakdown diodecomplementary logicsmolybdenum disulfidemultifunctionalityrectification

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Gate-coupled semiconductors are influenced by drain bias, affecting channel carrier density.
  • Current modulation capabilities of drain-bias effects have limited practical applications in switching electronics.

Purpose of the Study:

  • To demonstrate strategies for controlling current via drain-bias-induced carrier type switching in ambipolar MoS2 transistors.
  • To achieve multifunctionality in a CMOS-compatible device architecture.

Main Methods:

  • Utilized an ambipolar molybdenum disulfide (MoS2) field-effect transistor with platinum (Pt) bottom contacts.
  • Incorporated a partially gate-coupled p-n junction within the device architecture.
  • Investigated drain-bias-induced carrier type switching for current modulation.

Main Results:

  • Achieved high on/off ratios (>10^7 for NMOS/PMOS), a rectification ratio (~3x10^6), and a reversible negative breakdown diode (>10^9 on/off ratio).
  • Demonstrated multifunctionality including transistor, rectifier, diode, and photodetector operation.
  • Fabricated a complementary inverter with a gain of ~24 at Vdd = 1.5 V without complex doping or heterostructures.

Conclusions:

  • Strategies for high-performance ambipolar MoS2 devices were presented.
  • Effective utilization of drain bias for electrical switching in advanced electronics was demonstrated.
  • Facile fabrication of multifunctional MoS2 devices is achievable, paving the way for novel electronic applications.