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Updated: Jul 4, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Ultralow Auger-Assisted Interlayer Exciton Annihilation in WS2/WSe2 Moiré Heterobilayers.

Cheng-Syuan Cai1,2, Wei-Yan Lai1, Po-Hsuan Liu1

  • 1Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.

Nano Letters
|January 29, 2024
PubMed
Summary

Transition metal dichalcogenide (TMD) heterobilayers exhibit unique Auger annihilation processes for interlayer excitons. These findings reveal an ultralow Auger coefficient, crucial for quantum simulation applications.

Keywords:
2D materialsexciton−exciton annihilationinterlayer exciton dynamicsintra- and interlayer electron interactionsmoiré superlatticestransition metal dichalcogenidesupconversion

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