Graphene Fermi Level-Guided Attachment of Single Exoelectrogens and Induced Interfacial Doping

Graphene's exceptional electronic and mechanical properties make it a promising material for bioelectronic applications; however, understanding its interaction with electrogenic bacteria is crucial to harness its full potential. This study investigates the interface between electrogenic bacteria and graphene with Raman spectroscopy by analyzing the distinctive spectral fingerprints to understand electron energy and distribution via this non-destructive and label-free method. We find that the presence of bacteria induces a distinct red-shift in the G peak positions of graphene, indicating electron doping. Correspondingly, the bacteria demonstrate a predilection for attachment on hole-rich sites on the graphene sheet, evidenced by the comparative analysis of pre- and post-spatial Raman mapping, revealing their consistent presence within the hole-doped 2D peak position range of 2673.89-2675.43 cm^-1. This affinity of bacteria is due to the overall higher Fermi level (∼4.9 ± 0.2 eV) of these regions, which favors electron transfer. These findings demonstrate the potential of leveraging the graphene's electronic properties in engineering graphene-based biosensors. Tuning graphene's charge carrier concentration would enable the promotion or prevention of bacterial attachment, facilitating capture of specific bacteria or development of antimicrobial surfaces. This approach enables clean, efficient, and accurate study of graphene-based bacterial systems, driving significant advancements and enhancing their performance.