Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
P-N junction01:11

P-N junction

534
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
534
Biasing of P-N Junction01:16

Biasing of P-N Junction

533
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
533
Double Resonance Techniques: Overview01:12

Double Resonance Techniques: Overview

210
Double resonance techniques in Nuclear Magnetic Resonance (NMR) spectroscopy involve the simultaneous application of two different frequencies or radiofrequency pulses to manipulate and observe two distinct nuclear spins. One important application of double resonance is spin decoupling, which selectively suppresses coupling with one type of nucleus while observing the NMR signal from another nucleus, simplifying the spectrum and enhancing resolution.
Spin decoupling is usually achieved by...
210

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Impossibility of refrigeration and engine operation in minimal qubit repeated-interaction models.

The Journal of chemical physics·2026
Same author

Hard-Wired Solid-State Bioelectronic Micropore Devices: Permanent Metal-Protein-Metal Junction Proof-of-Concept.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Without Contact Resistance, Proteins in Thin-Film Solid-State Junctions Can Be Efficient Electronic Conducting Materials.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Algorithms and software for open quantum system dynamics.

The Journal of chemical physics·2025
Same author

Epitaxial Mixed-Dimensional MoS<sub>2</sub> Nanofin-Nanoribbon Hybrids and Their Integration into Electronic and Optoelectronic Devices.

ACS applied materials & interfaces·2025
Same author

Machine learning delta-T noise for temperature bias estimation.

The Journal of chemical physics·2025

Related Experiment Video

Updated: Jul 4, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K

Delta-T Flicker Noise Demonstrated with Molecular Junctions.

Ofir Shein-Lumbroso1, Matthew Gerry2, Abhay Shastry3

  • 1Department of Chemical and Biological Physics, Weizmann Institute of Science, Rehovot 7610001, Israel.

Nano Letters
|January 31, 2024
PubMed
Summary

Researchers discovered a new type of electronic noise, delta-T flicker noise, occurring in nanoscale conductors due to temperature differences, not voltage. This finding offers new ways to detect temperature gradients in tiny electronic devices.

Keywords:
1/f noiseatomic contactflicker noisemolecular junctionquantum transportthermal noise

More Related Videos

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
10:35

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals

Published on: May 29, 2018

8.7K
Single-Molecule F&#246;rster Resonance Energy Transfer Methods for Real-Time Investigation of the Holliday Junction Resolution by GEN1
11:27

Single-Molecule Förster Resonance Energy Transfer Methods for Real-Time Investigation of the Holliday Junction Resolution by GEN1

Published on: September 18, 2019

9.5K

Related Experiment Videos

Last Updated: Jul 4, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K
Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
10:35

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals

Published on: May 29, 2018

8.7K
Single-Molecule F&#246;rster Resonance Energy Transfer Methods for Real-Time Investigation of the Holliday Junction Resolution by GEN1
11:27

Single-Molecule Förster Resonance Energy Transfer Methods for Real-Time Investigation of the Holliday Junction Resolution by GEN1

Published on: September 18, 2019

9.5K

Area of Science:

  • Condensed Matter Physics
  • Nanoscience
  • Quantum Transport

Background:

  • Electronic flicker noise is a common phenomenon in conductors, often linked to electron transport and material properties.
  • Traditional flicker noise arises from applied voltage or current, providing insights into conductor behavior.
  • Existing noise analysis primarily focuses on scenarios with electrical bias.

Purpose of the Study:

  • To identify and characterize a novel form of electronic flicker noise.
  • To investigate noise generation in nanoscale conductors under temperature gradients without electrical bias.
  • To explore the potential applications of this new noise phenomenon.

Main Methods:

  • Experimental demonstration of delta-T flicker noise in molecular junctions.
  • Theoretical characterization using quantum transport theory.
  • Analysis of noise generation under thermal gradients in nanoscale systems.

Main Results:

  • Identification of a previously unknown electronic flicker noise, termed delta-T flicker noise.
  • Demonstration that delta-T flicker noise occurs solely due to temperature differences across nanoscale conductors.
  • Validation of the noise phenomenon in molecular junctions and theoretical frameworks.

Conclusions:

  • Delta-T flicker noise is a significant factor in nanoscale conductors experiencing temperature gradients.
  • This noise can limit the performance of nanoscale electronic devices.
  • Delta-T flicker noise provides a sensitive method for detecting temperature differences in various nanoscale conductors, including atomic-scale junctions.