Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Semiconductors01:22

Semiconductors

703
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
703
Interfacial Electrochemical Methods: Overview01:06

Interfacial Electrochemical Methods: Overview

248
Interfacial electrochemical methods focus on the phenomena occurring at the boundary between an electrode and a solution, as opposed to bulk methods that concentrate on the solution's overall properties. These interfacial methods are classified as either static or dynamic based on the presence of a nonzero current in the electrochemical cell and the consistency of analyte concentrations. Static methods, such as potentiometry, measure the cell's potential without any significant current...
248
Electrodeposition01:08

Electrodeposition

634
Electrodeposition is a technique used to separate an analyte from interferents by electrochemical processes. Here, the analyte is a metal ion that can be deposited on an electrode immersed in the sample solution. The electrochemical setup consists of an anode and a cathode. When an electric current is applied to the setup, oxidation occurs at the anode. At the cathode, which consists of a large metal surface, metal ions undergo reduction and deposit onto the surface.
Electrodeposition can...
634

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels.

Materials (Basel, Switzerland)·2026
Same author

Dynamic Control of Band Alignment and Built-In Potential in High Performance Self-Powered InSe/SnS<sub>2</sub> Van der Waals Photodetectors via Gas Molecular Physisorption.

Small science·2026
Same author

Interfacial Hopping Integral as a Predictive Descriptor for Electron Transport: Saturated Alkane Junctions.

Journal of the American Chemical Society·2026
Same author

Enhancing Sky-Blue Perovskite Light-Emitting Diode Performance through Guanidinium-Based Dual-Functional Molecular Engineering.

ACS applied materials & interfaces·2026
Same author

Capped Vapor-Liquid-Solid Growth of Vanadium-Substituted Molybdenum Disulfide Ultrathin Films for Enhanced Photocatalytic Activity.

ACS nano·2026
Same author

Wafer-Scale Single-Crystal WSe<sub>2</sub> Monolayers Using Substrate-Passivation-Driven Epitaxy.

ACS nano·2026

Related Experiment Video

Updated: Jul 4, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K

Graphene-All-Around Cobalt Interconnect with a Back-End-of-Line Compatible Process.

Chi-Yuan Kuo1, Jia-Heng Zhu1, Yun-Ping Chiu1

  • 1Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.

Nano Letters
|January 31, 2024
PubMed
Summary

Graphene-all-around structures enhance cobalt interconnects, improving current density and reducing resistance for next-generation CMOS technology.

Keywords:
BEOL compatibleCo interconnectselectromigrationgraphene-all-aroundreliability

More Related Videos

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.7K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.2K

Related Experiment Videos

Last Updated: Jul 4, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.7K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.2K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Manufacturing

Background:

  • The back end of the line (BEOL) in complementary metal-oxide-semiconductor (CMOS) technology faces challenges with interconnect reliability and performance.
  • Cobalt (Co) is a promising material for interconnects, but its integration requires enhanced properties for advanced nodes.

Purpose of the Study:

  • To investigate the integration of cobalt interconnects with a graphene-all-around (GAA) structure.
  • To evaluate the impact of GAA structures on the electrical properties and reliability of cobalt interconnects.
  • To confirm graphene's role as a diffusion barrier in the GAA architecture.

Main Methods:

  • Hot-wire chemical vapor deposition (HWCVD) at 380 °C to grow GAA structures.
  • Electrical characterization including current density, resistance, and electromigration lifetime measurements.
  • X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) for material analysis.
  • Time-dependent dielectric breakdown (TDDB) measurements to assess diffusion barrier properties.

Main Results:

  • GAA structures were successfully grown within the BEOL thermal budget.
  • Co interconnects with GAA demonstrated a 10.8% increase in current density and a 27% reduction in resistance.
  • Electromigration lifetime was extended by 36 times for Co interconnects in GAA.
  • XPS and DFT confirmed carbon-Co bonding, enhancing Co stability.
  • Graphene confirmed to act as an effective diffusion barrier in the GAA structure.

Conclusions:

  • The GAA structure significantly enhances the electrical performance and reliability of cobalt interconnects.
  • The observed improvements are attributed to carbon-Co bonding and graphene's diffusion barrier properties.
  • GAA Co interconnects show strong potential as next-generation interconnect materials for advanced CMOS BEOL applications.