Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Biasing of P-N Junction01:16

Biasing of P-N Junction

533
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
533
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

356
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
356
Schottky Barrier Diode01:27

Schottky Barrier Diode

357
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
357
P-N junction01:11

P-N junction

534
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
534
Field Effect Transistor01:29

Field Effect Transistor

405
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
405

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Seamless human electronics interfacing through advanced skin attachable and implantable sensor technologies.

Discover nano·2026
Same author

Intrinsic Dual-Phase Regulated GeSe<sub>2</sub> Nanoparticles Triggered by Ball-Milling Treatment for Photonic Multi-Valued Logic Circuits.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Surveillance for Metastriate Ticks and Spotted Fever Group Rickettsioses in Southern Illinois.

The American journal of tropical medicine and hygiene·2026
Same author

Engineering Synergistic Pd-Ni Co-Modified System for Highly Efficient Hydrogen Sensing.

ACS sensors·2026
Same author

An integrated wireless deep-UV sensing system for intelligent early fire detection.

Science advances·2026
Same author

Habitat Type and Locality Structure the Midgut Microbiota of Aedes albopictus.

Microbial ecology·2026

Related Experiment Video

Updated: Jul 4, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction.

Seongjae Kim1, Yunchae Jeon1, Eun Kwang Lee2

  • 1SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea.

Nano Letters
|January 31, 2024
PubMed
Summary

This study introduces a novel channel switching negative differential resistance (CS-NDR) device with tunable photo/gate properties. The device demonstrates reproducible performance and enables text image detection, advancing electronic applications.

Keywords:
Negative differential resistancegrain boundaryheterostructureorganic semiconductors

More Related Videos

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

Related Experiment Videos

Last Updated: Jul 4, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

11.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Condensed Matter Physics

Background:

  • Negative differential resistance (NDR) is a unique electrical property attracting significant research interest.
  • Existing NDR devices often lack reproducibility and tunable characteristics.

Purpose of the Study:

  • To propose and demonstrate a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device.
  • To investigate the mechanism behind the device's NDR behavior and its photoinduced effects.
  • To assess the device's reproducibility, uniformity, and potential for image detection applications.

Main Methods:

  • Fabrication of a novel CS-NDR device architecture.
  • Characterization of device performance under varying photo and gate conditions.
  • Experimental investigation of photoinduced NDR effects attributed to grain boundaries.
  • Construction and testing of a 9x9 CS-NDR device array.

Main Results:

  • The CS-NDR device exhibits superior linear gate-tunable NDR behavior with high reproducibility.
  • Photoinduced NDR behavior is experimentally linked to the grain boundaries of dinaphtho[2,3-b:2',3'-f]-thieno[3,2-b]thiophene.
  • A 9x9 array of CS-NDR devices demonstrates excellent uniformity and reproducibility.
  • Successful detection of text images using the 81-device CS-NDR array.

Conclusions:

  • The proposed CS-NDR device offers a promising platform for advanced electronic applications due to its tunable and reproducible characteristics.
  • The findings highlight the role of grain boundaries in photoinduced NDR phenomena.
  • The successful demonstration of image detection validates the potential of CS-NDR arrays for sensing and computing.