PdSe₂/MoSe₂: a promising van der Waals heterostructure for field effect transistor application

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Field-effect transistors (FETs) are essential semiconductor devices.
• Two-dimensional (2D) materials offer superior electronic properties over bulk materials.
• 2D heterostructures enable fine-tuning of electrical characteristics.

Purpose of the Study:

• To investigate two distinct PdSe2/MoSe2 heterostructures for FET applications.
• To analyze the electrical response and interface properties of these heterostructures.
• To understand charge transfer mechanisms at the PdSe2/MoSe2 interface.

Main Methods:

• Mechanical exfoliation of PdSe2 and MoSe2.
• Fabrication and electrical characterization of PdSe2/MoSe2 heterostructures.
• Analysis of ON/OFF ratio, ON current, and mobility.

Main Results:

• Achieved a high ON/OFF ratio of approximately 5.78 × 10^5.
• Observed a high ON current of approximately 10 μA.
• Demonstrated high mobility of approximately 63.7 cm^2 V^-1 s^-1.
• Identified a defect-free interface provided by MoSe2 to PdSe2.

Conclusions:

• PdSe2/MoSe2 heterostructures exhibit excellent switching characteristics and high performance for FETs.
• The defect-free interface is key to enhanced ON current and mobility.
• Insights into interfacial charge transfer can advance next-generation electronic technologies.