Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
P-N junction01:11

P-N junction

534
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
534

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Iterative Synthesis of Pyrene-Coronene Molecular Graphene Nanoribbons.

Angewandte Chemie (International ed. in English)·2026
Same author

Characterization of the phenolate-keto oxyluciferin/luciferase interactions in the S<sub>1</sub> state by QM/MM energy decomposition analysis.

Computational biology and chemistry·2026
Same author

Region-specific patterns of soil bacterial communities' adaptation to hexachlorocyclohexane contamination.

Journal of hazardous materials·2026
Same author

Polar Parallel Substituents Trigger High Conductance Paths in Carotenoid Wires.

ACS applied materials & interfaces·2026
Same author

High Charge Carrier Mobility in Non-Conjugated 3D Covalent Organic Frameworks.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Unravelling the Role Played by Non-covalent Interactions in the Action Mechanism of PCDDs within Cells.

Journal of chemical information and modeling·2026

Related Experiment Video

Updated: Jul 4, 2025

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.0K

Molecular Graphene Nanoribbon Junctions.

Mauro Marongiu1, Tracy Ha2, Sara Gil-Guerrero3

  • 1POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, 20018 Donostia-San Sebastian, Spain.

Journal of the American Chemical Society
|February 2, 2024
PubMed
Summary
This summary is machine-generated.

Researchers developed nitrogen-doped graphene nanoribbons for molecular electronics. These molecular wires show long-range charge transport over 6 nm, a key advance for nanoscale devices.

More Related Videos

Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma
09:48

Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma

Published on: February 2, 2012

15.3K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K

Related Experiment Videos

Last Updated: Jul 4, 2025

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.0K
Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma
09:48

Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma

Published on: February 2, 2012

15.3K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Molecular Electronics

Background:

  • Designing molecular wires for long-range charge transport is crucial for molecular electronics.
  • Graphene nanoribbons offer unique electrical properties for potential molecular wire applications.
  • Charge transport in individual graphene nanoribbons is not well understood.

Purpose of the Study:

  • To synthesize N-doped pyrene-pyrazinoquinoxaline molecular graphene nanoribbons.
  • To investigate the charge transport properties of these nanoribbons in molecular junctions.
  • To demonstrate long-range charge transport in graphene nanoribbon-based molecular wires.

Main Methods:

  • Synthetic chemistry for N-doped graphene nanoribbon preparation.
  • Scanning tunneling microscope-based break-junction (STM-BJ) measurements.
  • Experimental and computational analysis of charge transport.

Main Results:

  • Stable molecular graphene nanoribbon junctions were formed using diamino anchoring groups.
  • Evidence of long-range tunneling charge transport was observed.
  • A shallow conductance length dependence indicated efficient transport through the >6 nm molecular backbone.

Conclusions:

  • N-doped pyrene-pyrazinoquinoxaline molecular graphene nanoribbons facilitate long-range charge transport.
  • These findings represent a significant step towards realizing molecular electronics.
  • The developed nanoribbons show promise as molecular wires for future electronic applications.