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Updated: Jul 4, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Wei Li1, Xingui Zhou2, Jingchao Xu1
1CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China.
This study introduces a rapid algorithm for pinpointing pattern centers (PCs) in electron backscatter diffraction (EBSD), achieving high accuracy with minimal computation time for improved materials analysis.
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