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Updated: May 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Flash phase engineering of MoS2 nanofilms for enhanced photoelectrochemical performance
Rong Tan1,2, Yuxin Liu1,3, Yifeng Tu2
1Department of Biomolecular Systems, Max Planck Institute of Colloids and Interface 14476 Potsdam Germany Felix.Loeffler@mpikg.mpg.de.
Abstract:
A heterophase structure combining semiconducting 2H- and metallic 1T-MoS2 exhibits significantly enhanced photoelectrochemical performance due to the electrical coupling and synergistic effect between the phases. Therefore, site-selective effective phase engineering is crucial for the fabrication of MoS2-based photoelectrochemical devices. Here, we employed a flash phase engineering (FPE) strategy to precisely fabricate a 2H-1T heterophase structure. This technique allows simple, efficient, and precise control over the micropatterning of MoS2 nanofilms while enabling site-selective phase transition from the 1T to the 2H phase. The detection of reduced glutathione (GSH) showed an approximately 5-fold increase in sensitivity when using the electrode fabricated by FPE.
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