Flash phase engineering of MoS2 nanofilms for enhanced photoelectrochemical performance
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Updated: May 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Rong Tan1,2, Yuxin Liu1,3, Yifeng Tu2
1Department of Biomolecular Systems, Max Planck Institute of Colloids and Interface 14476 Potsdam Germany Felix.Loeffler@mpikg.mpg.de.
Abstract:
A heterophase structure combining semiconducting 2H- and metallic 1T-MoS2 exhibits significantly enhanced photoelectrochemical performance due to the electrical coupling and synergistic effect between the phases. Therefore, site-selective effective phase engineering is crucial for the fabrication of MoS2-based photoelectrochemical devices. Here, we employed a flash phase engineering (FPE) strategy to precisely fabricate a 2H-1T heterophase structure. This technique allows simple, efficient, and precise control over the micropatterning of MoS2 nanofilms while enabling site-selective phase transition from the 1T to the 2H phase. The detection of reduced glutathione (GSH) showed an approximately 5-fold increase in sensitivity when using the electrode fabricated by FPE.
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