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Atomically Thin Current Pathways in Graphene through Kekulé-O Engineering.

Santiago Galván Y García1, Yonatan Betancur-Ocampo2, Francisco Sánchez-Ochoa2

  • 1Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, 62210 Cuernavaca, México.

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|February 8, 2024
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Summary

We show how to guide electrical current in graphene using engineered distortions. This creates a switchable, ballistic domain-wall state, paving the way for novel electronic devices and high-energy physics research.

Keywords:
Jackiw−Rebbi modelKekulé distortionsgraphenequantum transportsolitons

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Graphene's unique electronic properties offer potential for advanced electronic devices.
  • Controlling current flow at the atomic scale is crucial for next-generation electronics.

Purpose of the Study:

  • To demonstrate a method for guiding electrical current in graphene using engineered atomic structures.
  • To investigate the properties of a topologically distinct domain-wall state induced by these structures.
  • To explore the potential of this system for technological applications and fundamental physics research.

Main Methods:

  • Engineering of Kekulé-O distortions in graphene to create atomically thin current pathways.
  • Utilizing grain boundaries within these distortions to define topologically distinct regions.
  • Theoretical explanation based on a generalized Jackiw-Rebbi model.
  • Atomic modeling and Density Functional Theory (DFT) calculations to confirm material realization.

Main Results:

  • Demonstrated guiding of current flow along engineered pathways in graphene.
  • Observation of a ballistic domain-wall state, independent of grain boundary orientation.
  • The domain-wall state exhibits a tunable band gap, enabling electrostatic switching of current.
  • Theoretical framework explains electron behavior as fermions with an effective complex mass.

Conclusions:

  • Engineered Kekulé-O distortions in graphene enable precise control of current flow.
  • The induced gapped domain-wall state offers a novel mechanism for electronic switching.
  • This system serves as a promising platform for both technological applications and exploring high-energy physics concepts.
  • Realization is feasible through Ti atom decoration of graphene, as supported by DFT.