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Strong In-Plane Magnetization and Spin Polarization in (Co0.15Fe0.85)5GeTe2/Graphene van der Waals Heterostructure
Roselle Ngaloy1, Bing Zhao1, Soheil Ershadrad2
1Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
This study introduces (Co0.15Fe0.85)5GeTe2 (CFGT), a van der Waals magnet enabling room-temperature spintronic devices. Its strong in-plane magnetization and spin polarization are key for next-generation technologies.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Van der Waals (vdW) magnets offer tunable magnetic properties but often require cryogenic temperatures for spintronic applications.
- Existing vdW magnet spintronic devices typically exhibit out-of-plane or canted magnetization, limiting their practical use.
Purpose of the Study:
- To develop room-temperature spintronic devices using vdW magnets.
- To investigate the in-plane magnetization and spin polarization of (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene.
Main Methods:
- Density Functional Theory (DFT) calculations to determine anisotropy origins.
- Magnetization measurements to confirm ferromagnetism and remanence.
- Fabrication and characterization of CFGT/graphene heterostructures for spin injection and detection.
Main Results:
- CFGT exhibits ferromagnetism above room temperature with clear remanence.
- DFT calculations indicate Co substitution in Fe layers influences anisotropy.
- Experimental results demonstrate efficient spin injection/detection and strong in-plane magnetization with negative spin polarization at the CFGT/graphene interface.
Conclusions:
- CFGT's room-temperature in-plane magnetization is suitable for graphene lateral spin-valve devices.
- This work highlights CFGT's potential for advanced spintronic technologies.
- The study paves the way for practical, high-temperature spintronic applications.
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