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Updated: Jul 3, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or

David Cooper1, Lucas Bruas1, Matthew Bryan1

  • 1Universite Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Micron (Oxford, England : 1993)
|February 10, 2024
PubMed

Keywords:
4D STEMDifferential phase contrastElectric fieldElectron holographySemiconductors

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