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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System

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Published on: January 7, 2022

1.8 V all-solid-state flexible asymmetric microsupercapacitors based on direct-writing electrodes.

Yaling Wang¹, Mengyuan Ran¹, Ming Zhu¹

¹College of Energy Engineering, Xi'an University of Science and Technology, Xi'an, 710054, China.

|February 13, 2024

Summary

High-performance asymmetric microsupercapacitors (AMSCs) were developed using a direct-writing method. These devices offer a wide voltage window and high energy density, advancing portable electronics.

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Area of Science:

Materials Science
Electrochemistry
Energy Storage

Background:

Microsupercapacitors require higher energy density for practical applications.
Asymmetric microsupercapacitors (AMSCs) using pseudocapacitive materials can enhance capacitance and operating voltage.

Purpose of the Study:

To design and prepare pseudocapacitive electrodes for AMSCs via a one-step direct-writing method.
To improve the energy density and performance of microsupercapacitors.

Main Methods:

Developed double-electric-layer-structured pseudocapacitive electrodes.
Utilized a one-step direct-writing fabrication technique.
Tested AMSCs in a polyvinyl alcohol/LiCl gel electrolyte.

Main Results:

Achieved a wide operating voltage window of 1.8 V.
Obtained a high areal capacitance of 42 mF cm^-2.
Demonstrated an outstanding areal energy density of 18.9 μW h cm^-2.

Conclusions:

The developed AMSCs exhibit excellent performance due to structural advantages and complementary electrode voltages.
This study presents a novel approach for creating high-performance microsupercapacitors.
The findings support the advancement of microsupercapacitors for portable electronic devices.