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Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
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Enhancing control in spatial atomic layer deposition: insights into precursor diffusion, geometric parameters, and
Thien Thanh Nguyen1, Diem Nguyen Thi Kieu1,2, Hao Van Bui1
1Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam.
Nanotechnology
|February 13, 2024
Summary
Spatial atomic layer deposition (SALD) accelerates growth but faces challenges from chemical vapor deposition (CVD). This study reveals how diffusion and geometry impact SALD growth, offering insights for improved film control.
Area of Science:
- Materials Science
- Chemical Engineering
- Nanotechnology
Background:
- Spatial atomic layer deposition (SALD) offers rapid, atmospheric-pressure film growth, surpassing conventional atomic layer deposition (ALD).
- Inadvertent chemical vapor deposition (CVD) contributions in SALD hinder control over film homogeneity and properties.
- Understanding the interplay between precursor diffusion, system geometry, and growth kinetics is crucial for optimizing SALD.
Purpose of the Study:
- To investigate the influence of diffusion coefficients and geometric parameters on spatial atomic layer deposition (SALD) growth patterns.
- To develop physical models and simulations for elucidating SALD growth kinetics.
- To provide strategies for controlling the ALD/CVD growth mode and enhancing film properties.
Main Methods:
- Developed comprehensive physical models for SALD growth kinetics.
- Employed finite element method (FEM) simulations for fluid dynamics analysis.
- Conducted experimental studies on ZnO and SnO2 film deposition, analyzing growth rates as a function of deposition gap.
Main Results:
- Experimental findings align with theoretical models, showing distinct growth rate trends for ZnO and SnO2 films based on deposition gap, attributed to precursor diffusion.
- Reduced deposition gaps benefit diffusive and low-volatility precursors, minimizing CVD and enhancing chemisorption.
- For highly diffusive precursors, sub-100 μm gaps are critical but challenging for scale-up; adjusting gas outlet separation mitigates CVD.
Conclusions:
- Diffusion coefficients and geometric parameters significantly influence SALD growth patterns and film properties.
- Optimizing the deposition gap and gas outlet configuration is key to controlling the ALD/CVD growth balance.
- Strategic adjustments to the injection head design can enhance film quality and enable large-scale SALD applications.
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