Design and optimization of a multidirectional photodetector in optoelectronic integration

Area of Science:

• Semiconductor Devices
• Optoelectronics
• Materials Science

Background:

• Optoelectronic integration (OEI) systems require advanced photodetectors (PDs) for efficient light signal processing.
• Existing PDs often lack the multidirectional sensing capabilities crucial for complex OEI applications.
• Germanium is a key material for optoelectronic devices due to its suitable bandgap and compatibility with silicon fabrication.

Purpose of the Study:

• To introduce and demonstrate a novel three-dimensional, multidirectional photodetector (PD) based on germanium.
• To design and optimize a chip-level PD capable of discerning light signals from four distinct directions.
• To investigate the performance parameters and operational strategies of the multidirectional PD for OEI systems.

Main Methods:

• Utilized fundamental physical principles of PDs to guide the design of structure, dimensions, and doping.
• Developed an integrated chip-level multidirectional PD.
• Performed simulation verification to confirm key performance parameters.
• Conducted in-depth investigations into external bias, doping concentration, and doping region effects.

Main Results:

• Successfully designed and demonstrated a 3D, multidirectional germanium PD for OEI.
• The integrated chip-level PD can discern light from four different directions.
• Simulation results confirmed that the PD's performance parameters meet specified requirements.
• Identified strategies for evaluating directional light signals and assessed the impact of light intensity fluctuations.

Conclusions:

• The developed multidirectional PD enhances the efficiency of light detection in OEI systems.
• Optimization through analysis of bias, doping concentration, and doping regions improved device performance.
• This work contributes to the advancement of integrated OEI chips with enhanced sensing capabilities.