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Low-threshold AlGaN-based deep ultraviolet laser enabled by a nanoporous cladding layer.

Yongming Zhao, Liqiong Deng, Feng Wu

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    |February 15, 2024
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    Researchers developed a novel deep ultraviolet (DUV) laser using nanoporous aluminum gallium nitride (AlGaN) cladding. This breakthrough enables low-threshold DUV laser operation, crucial for advanced optical applications.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Deep ultraviolet (DUV) lasers are essential for applications like sterilization and spectroscopy.
    • Achieving low-threshold DUV laser operation remains a significant challenge in semiconductor device fabrication.

    Purpose of the Study:

    • To demonstrate a low-threshold AlGaN-based multiple-quantum-well (MQW) DUV laser.
    • To investigate the use of nanoporous (NP) n-AlGaN as a bottom cladding layer for improved optical confinement.

    Main Methods:

    • Fabrication of an AlGaN-based MQW DUV laser structure on a sapphire substrate.
    • Utilizing nanoporous n-AlGaN as the bottom cladding layer to reduce the refractive index.
    • Optical pumping experiments to measure threshold power density and emission characteristics at room temperature.
    • Electrical I-V measurements to assess the ohmic contact properties of the NP n-AlGaN layer.

    Main Results:

    • Demonstrated a DUV laser at 278 nm with a very-low-threshold optically pumped power density of 79 kW/cm² at room temperature.
    • Achieved transverse electric (TE)-polarization-dominant emission.
    • Observed a high optical confinement factor of 9.12% due to the low refractive index of the NP n-AlGaN.
    • Confirmed ohmic contact compatibility with NP n-AlGaN, indicating potential for electrically driven devices.

    Conclusions:

    • The use of nanoporous n-AlGaN as a cladding layer is key to achieving low-threshold lasing in DUV AlGaN-based lasers.
    • The demonstrated device shows promise for efficient DUV light generation.
    • This work offers valuable insights for designing and fabricating next-generation low-threshold DUV laser devices.