Paper based flexible MoS₂-CNT hybrid memristors

We report for the first time MoS₂/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT's in MoS₂to improve the MoS₂conductivity and investigate the memristor device characteristics. The device with 10% CNT shows a lowV_SETvoltage of 2.5 V, which is comparatively small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ∼10⁴s and 10²cycles, making it a potential candidate in flexible painted electronics. Along with good electrical performance, it also demonstrates a high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS₂-CNT hybrid structure is corroborated by percolation and defect-induced filament formation. Additionally, the device displays synaptic plasticity performance, simulating potentiation and depression processes. Furthermore, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the environmental pollution caused by electronic waste in the near future.