Related Experiment Video
Updated: Jun 16, 2026

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
Published on: August 15, 2015
High-Performance p-Type Bi2Te3-Based Thermoelectric Materials Enabled via Regulating Bi-Te Ratio
Xiaolei Wang1,2, Hongjing Shang2,3, Hongwei Gu2,3
1College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China.
Abstract:
Bi2Te3-based alloys, as the sole commercial thermoelectric (TE) material, play an irreplaceable role in the thermoelectric field. However, the low TE efficiency, poor mechanical properties, and high cost have limited its large-scale applications. Here, high-performance p-type Bi2Te3-based materials were successfully prepared by ball milling and hot pressing. The optimized p-type Bi0.55Sb1.45Te3 + 2.5 wt % Bi shows a peak zT value of 1.45 at 360 K, and the average zT value of up to 1.24 at 300-480 K, which is completely comparable with previously reported Bi2Te3-based alloys with excellent performance. Such performance mainly results from the enhanced electrical conductivity and decreased lattice thermal conductivity via regulating carrier and phonon transport. Furthermore, this material shows good mechanical properties, in which the Vickers hardness and compressive strength are up to 0.95 GPa and 94.6 MPa, respectively. Overall, both the thermoelectric and mechanical performance of the materials fabricated by our processing technology are quite competitive. This may enlighten researchers concentrating on Bi2Te3-based alloys, thus further promoting their industrial applications.
More Related Videos
Related Concept Videos
Types of Semiconductors
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

