Probing Polymorphic Stacking Domains in Mechanically Exfoliated Two-Dimensional Nanosheets Using Atomic Force
Chengjie Pei1, Jindong Zhang1, Hai Li1
1Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
Nanomaterials (Basel, Switzerland)
|February 23, 2024
Summary
Stacking order significantly impacts two-dimensional (2D) materials. This study uses ultralow-frequency Raman spectroscopy and electrostatic force microscopy to reveal how stacking influences molybdenum disulfide and diselenide nanosheets.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Stacking order is a critical factor in two-dimensional (2D) layered materials, influencing interlayer interactions and electronic properties.
- Polymorphic stacking domains in transition metal dichalcogenides (TMDCs) can affect material performance.
- Understanding stacking order is crucial for tuning the optoelectronic properties of 2D materials.
Purpose of the Study:
- To systematically investigate the effect of stacking order on interlayer interactions and electrostatic screening in few-layer molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) nanosheets.
- To establish ultralow-frequency (ULF) Raman spectroscopy and electrostatic force microscopy (EFM) as effective tools for characterizing stacking order in 2D materials.
- To explore the correlation between stacking order and the optoelectronic properties of TMDC nanosheets.
Main Methods:
- Utilized ultralow-frequency (ULF) Raman spectroscopy to identify and confirm polymorphic stacking domains.
- Employed high-resolution atomic force microscopy (HR-AFM) to visualize atomic lattice arrangements and stacking differences.
- Applied electrostatic force microscopy (EFM) phase imaging to map the distribution of stacking domains and investigate electrostatic screening.
Main Results:
- Stacking order differences in MoS2 and MoSe2 nanosheets were successfully confirmed by ULF Raman spectroscopy and HR-AFM.
- EFM phase imaging effectively revealed the spatial distribution of polymorphic stacking domains.
- The study suggests that EFM, combined with ULF Raman spectroscopy, provides a rapid and high-resolution method for probing stacking domains in 2D TMDCs.
Conclusions:
- EFM and ULF Raman spectroscopy are powerful, complementary techniques for characterizing stacking order in 2D TMDCs.
- The findings provide a foundation for correlating interlayer interactions, stacking order, and optoelectronic properties in 2D materials.
- This research offers a promising approach for the controlled engineering of TMDC properties through stacking order manipulation.
Keywords:
atomic force microscopyelectrostatic screeningstacking ordertransition metal dichalcogenidesultralow-frequency Raman spectroscopy

