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Published on: September 12, 2014
Self-powered SnSx/TiO2 photodetectors (PDs) with dual-band binary response and the applications in imaging and
Jing Chen1, Jianping Xu2, Lina Kong1
1School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.
Abstract:
In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.

