Probing impact on magnetic behavior of cobalt layer grown on thick MoS layer
Zainab Hussain1, Shashikant P Patole2, Shoyebmohamad F Shaikh3
1Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune, 411007, India. zaineb92@gmail.com.
Abstract:
Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS ). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS on the magnetic properties of the 10 nm Co layer. A comparative study on and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS . The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS layer. Furthermore, our results will help in developing next-generation spintronic devices.
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