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Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond
Taisuke Kageura1,2, Yosuke Sasama3, Tokuyuki Teraji4
1Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
ACS Applied Materials & Interfaces
|March 1, 2024
Summary
Controlling nitrogen-vacancy (NV) centers in hydrogen-terminated diamond is key for quantum tech. Researchers enhanced NV center detection by passivating the diamond surface, improving spin control for quantum applications.
Area of Science:
- Quantum Information Science
- Materials Science
- Surface Science
Background:
- Nitrogen-vacancy (NV) centers in diamond are crucial for quantum applications.
- Hydrogen-terminated diamond offers long spin coherence and charge state control.
- Surface adsorbates on hydrogen-terminated diamond create holes, hindering NV center control.
Purpose of the Study:
- To optically detect magnetic resonance of shallow NV centers in hydrogen-terminated diamond.
- To improve the control of spin states for NV centers near the diamond surface.
- To overcome challenges in creating negatively charged NV centers on hydrogen-terminated diamond.
Main Methods:
- Precise control of nitrogen implantation fluence for shallow NV center creation.
- Optical detection of magnetic resonance (ODMR) for NV center characterization.
- Surface passivation using hexagonal boron nitride (hBN) to reduce surface acceptor density.
Main Results:
- Successful optical detection of magnetic resonance for NV centers in hydrogen-terminated diamond.
- Enhanced probability of detecting NV center resonance after hBN passivation.
- Demonstrated reduction of surface acceptor density through hBN passivation without air exposure.
Conclusions:
- Precise nitrogen implantation enables NV center control in hydrogen-terminated diamond.
- Hexagonal boron nitride passivation effectively reduces surface acceptor density, enhancing NV spin control.
- This method advances the use of NV centers in quantum applications.
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