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Monolithically integrated 940 nm VCSELs on bulk Ge substrates.

Zeyu Wan, Yun-Cheng Yang, Wei-Hsin Chen

|March 5, 2024

Summary

This summary is machine-generated.

Researchers developed novel Germanium-based Vertical-Cavity Surface-Emitting Laser (VCSEL) technology, improving wafer quality and device performance over traditional Gallium Arsenide (GaAs) counterparts.

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Area of Science:

Semiconductor Physics
Materials Science
Optoelectronics

Background:

Developing Germanium (Ge)-based Vertical-Cavity Surface-Emitting Lasers (VCSELs) is crucial for integrating optoelectronic devices on silicon photonics platforms.
Existing Ge-VCSEL technologies lack detailed process disclosures, hindering further development and adoption.

Purpose of the Study:

To establish an independent epitaxy and fabrication process for Ge-based VCSELs.
To enable the integration of Aluminum Gallium Arsenide (AlGaAs)-based semiconductor devices on bulk Ge substrates.
To present a detailed account of the Ge substrate specifications, transition layer, and fabrication process for Ge-VCSELs.

Main Methods:

Development of a unique Ge-based epitaxy process.
Optimization of transition layer structure and composition for AlGaAs-on-Ge integration.
Fabrication of Ge-based VCSEL devices.

Main Results:

Achieved a 40% reduction in surface root-mean-square roughness and a 72% decrease in average bow-warp for Ge-based VCSEL wafers compared to GaAs counterparts.
Demonstrated a 10% lower threshold current density for Ge-based VCSELs.
Observed a 19% higher maximum optical differential efficiency in Ge-based VCSELs compared to GaAs-based VCSELs.

Conclusions:

Successfully developed and disclosed a novel Ge-based VCSEL epitaxy and fabrication route.
The developed Ge-based VCSEL technology offers superior wafer quality and enhanced device performance metrics over traditional GaAs VCSELs.
This breakthrough paves the way for advanced heterogeneous integration of optoelectronic devices on Ge substrates.