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Updated: Jul 1, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence

Hairui Geng1, Jie Tang1, Yanwei Wu1

  • 1Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China.

ACS Nano
|March 12, 2024
PubMed
Summary

Researchers imaged valley excitons in 2D materials using scanning tunneling microscopy-induced luminescence. This technique reveals nanoscale variations in excitonic states, crucial for controlling optoelectronic properties.

Keywords:
WSe2boron nitridecircular polarizationimaging of valley excitonsscanning tunneling microscope-induced luminescence

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