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Reducing Domain Density Enhances Conversion Efficiency in GeTe.

Yi-Fen Tsai1, Min-Jung Yang2, Jie-Ru Deng3

  • 1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Small (Weinheim an Der Bergstrasse, Germany)
|March 14, 2024
PubMed
Summary
This summary is machine-generated.

Adding a small amount of indium to germanium telluride (GeTe) significantly enhances its thermoelectric properties. This optimized material shows high efficiency for mid-temperature energy generation.

Keywords:
GeTeconversion efficiencydefect densitydilute dopingfigure‐of‐meritstrain

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Energy Conversion

Background:

  • Thermoelectric (TE) materials are crucial for energy harvesting and cooling applications.
  • Germanium telluride (GeTe) is a promising TE material, but its efficiency needs improvement.
  • Controlling microstructure and defects is key to optimizing TE performance.

Purpose of the Study:

  • To investigate the effect of dilute indium doping and hot-pressing on the thermoelectric properties of GeTe.
  • To enhance the figure-of-merit (zT) and conversion efficiency of GeTe-based materials.
  • To explore the potential of modified GeTe for mid-temperature energy generation.

Main Methods:

  • Dilute doping of GeTe with indium.
  • Controlled synthesis and hot-pressing techniques.
  • Microstructural analysis using transmission electron microscopy (TEM) and geometric phase analysis (GPA).
  • Measurement of thermoelectric properties, including figure-of-merit (zT) and conversion efficiency.

Main Results:

  • Hot-pressing increased defect density, redistributed strain, and prevented Ge precipitates.
  • Indium-doped GeTe (In-GeTe) exhibited significantly improved TE properties compared to undoped GeTe.
  • A maximum figure-of-merit (zT) of 1.3 at 683 K was achieved.
  • An exceptional TE conversion efficiency of 2.83% at 723 K hot-side temperature was recorded.
  • Improvements were attributed to domain density engineering via hot-pressing.

Conclusions:

  • Dilute indium doping combined with hot-pressing is an effective strategy to enhance the TE performance of GeTe.
  • The In-GeTe alloy demonstrates superior TE properties and stability, making it suitable for mid-temperature TE energy generation.
  • Domain density engineering plays a vital role in optimizing thermoelectric conversion efficiency.