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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
254
Schottky Barrier Diode01:27

Schottky Barrier Diode

347
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
347
Biasing of P-N Junction01:16

Biasing of P-N Junction

528
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
528
Biasing of FET01:22

Biasing of FET

270
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
270
Diode: Forward bias01:20

Diode: Forward bias

1.0K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

350
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
350

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction.

Marco Coraiola1, Aleksandr E Svetogorov2, Daniel Z Haxell1

  • 1IBM Research Europe─Zurich, 8803 Rüschlikon, Switzerland.

ACS Nano
|March 15, 2024
PubMed
Summary

This study demonstrates a tunable Josephson diode in a novel heterostructure, achieving significant superconducting diode efficiency. The device

Keywords:
2DEGmultiterminal Josephson junctionnonreciprocal transportsuperconducting diode effectsuperconductor−semiconductor hybrid

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Area of Science:

  • Condensed matter physics
  • Quantum electronics
  • Superconductivity

Background:

  • Josephson junctions are fundamental superconducting devices.
  • The Josephson diode effect allows rectification of supercurrent.
  • Existing Josephson diodes often lack tunability or require specific materials.

Purpose of the Study:

  • To investigate a flux-tunable four-terminal Josephson junction for diode applications.
  • To explore the tunability of the Josephson diode effect in a symmetric device.
  • To develop a Josephson diode without relying on exotic materials.

Main Methods:

  • Fabrication of a four-terminal Josephson junction using an InAs/Al two-dimensional heterostructure.
  • Experimental investigation of direction-dependent switching currents under varying magnetic fluxes and gate voltages.
  • Validation using a circuit model of parallel Josephson junctions with nonsinusoidal current-phase relations.

Main Results:

  • Observed the Josephson diode effect with direction-dependent switching currents.
  • Achieved a widely tunable superconducting diode efficiency up to |η| ≈ 34%, dependent on flux and gate voltage.
  • Demonstrated that phase-tunable multiterminal junctions in symmetric devices can yield high diode efficiencies.

Conclusions:

  • Flux-tunable multiterminal Josephson junctions offer a promising platform for highly tunable superconducting diodes.
  • Symmetric devices with engineered flux asymmetry can exhibit significant Josephson diode effects.
  • This approach provides a pathway for developing versatile Josephson diodes using accessible materials.