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Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates.
Yixuan Zou1, Peng Li2, Caizhen Su3
1Department of Precision Instruments, Tsinghua University, Beijing 100084, China.
ACS Nano
|March 15, 2024
Summary
Flexible molybdenum disulfide (MoS2) field-effect transistors (FETs) encapsulated with hexagonal boron nitride (h-BN) demonstrate high-temperature resistance up to 550 °C. Graphene electrodes further enhance performance, enabling flexible integrated circuits for harsh environments.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- High-temperature electronics are crucial for aerospace and other demanding applications.
- Conventional silicon carbide (SiC) transistors face limitations in flexibility and power consumption.
- Two-dimensional (2D) molybdenum disulfide (MoS2) offers flexibility and low power but degrades above 200 °C.
Purpose of the Study:
- To develop high-temperature-resistant flexible transistors using 2D MoS2.
- To investigate the electrical properties and working mechanisms of MoS2 devices at elevated temperatures.
- To demonstrate the feasibility of flexible integrated circuits operating in harsh environments.
Main Methods:
- Fabrication of MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation.
- Integration of graphene electrodes for enhanced device performance.
- Testing of device stability and electrical characteristics at temperatures up to 550 °C in air.
- Realization of a flexible complementary metal-oxide-semiconductor (CMOS) NOT gate.
Main Results:
- The h-BN/h-BN encapsulated MoS2 FETs exhibited stability at temperatures ≥500 °C, significantly exceeding previous reports.
- MoS2 FETs with graphene electrodes showed superior high-temperature performance, including a larger on/off ratio and reduced subthreshold swing and threshold voltage shift compared to metal electrodes.
- Drastic variations in on/off ratio and subthreshold swing were observed at elevated temperatures due to thermal emission carriers.
- A functional flexible CMOS NOT gate capable of logic computing at 550 °C was successfully demonstrated.
Conclusions:
- Hexagonal boron nitride encapsulation enables MoS2 transistors to operate at significantly higher temperatures.
- Graphene electrodes provide superior performance for MoS2 FETs in high-temperature environments.
- This technology paves the way for next-generation flexible integrated circuits resistant to harsh conditions.
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